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HiPerFASTTM IGBT
IXGH30N30
VCES IC25 VCE(sat) tfi
= = = =
300 V 60 A 1.6 V 180 ns
Preliminary data
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 W ICM = 60 Clamped inductive load, L = 100 mH @ 0.8 VCES TC = 25C
Maximum Ratings 300 300 20 30 60 30 120 A 200 -55 ... +150 150 -55 ... +150 300 260 1.13/10 TO-247 AD 6 W C C C C C Nm/lb.in. g V V V V A A A
TO-247 AD
C (TAB) G C E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Features
* International standard package
JEDEC TO-247 AD
* High current handling capability * Newest generation HDMOSTM
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3)
process
* MOS Gate turn-on
- drive simplicity
Applications
* * * * *
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 300 2.5 5 200 1 100 nA 1.6 V V V mA mA
AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 mA, VGE = 0 V = 250 mA, VCE = VGE TJ = 25C TJ = 125C
Advantages
* High power density * Suitable for surface mounting * Switching speed for high frequency
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
applications
* Easy to mount with 1 screw,
(isolated mounting screw hole)
IXYS reserves the right to change limits, test conditions, and dimensions.
96542C (7/00)
(c) 2000 IXYS All rights reserved
1-4
IXGH 30N30
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 20 28 2500 S pF pF pF 170 35 75 nC nC nC ns ns ns ns mJ ns ns mJ 420 450 2.4 ns ns mJ
TO-247 AD (IXGH) Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 ms, duty cycle 2 %
VCE = 25 V, VGE = 0 V, f = 1 MHz
210 60 145
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
23 50
Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 mH, VCE = 0.8 VCES, RG = Roff = 1.0 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 mH VCE = 0.8 VCES, RG = Roff = 1.0 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG
25 40 170 180 1.0 25 40 0.3 250 300 1.6
Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8
Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
1.5 2.49
0.62 K/W 0.25 K/W
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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IXGH 30N30
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
Fig. 3. High Temperature Output Characteristics
Fig. 4. Temperature Dependence of VCE(sat)
Fig. 5. Admittance Curves
Fig. 6. Capacitance Curves)
(c) 2000 IXYS All rights reserved
3-4
IXGH 30N30
Fig. 7. Dependence of EON and EOFF on IC.
Fig. 8. Dependence of EON and EOFF on RG.
Fig. 9. Gate Charge
Fig. 10. Turn-off Safe Operating Area
Fig. 11. Transient Thermal Resistance
(c) 2000 IXYS All rights reserved
4-4

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